Dielectric ceramic composition and ceramic capacitor

ABSTRACT

A dielectric ceramic composition includes 100 mol % of an oxide of Ba, Ti and Zr, 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, 0.1 to 0.4 mol % of an oxide of Mg, 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr and 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W. The ceramic composition further includes a glass component having SiO 2  and x in the oxide of Ba(Ti 1−x Zr x )O 3  ranges from about 0.05 to about 0.26.

FIELD OF THE INVENTION

[0001] The present invention relates to a ceramic capacitor and ceramic compositions therefor; and, more particularly, to reduction resistive dielectric ceramic compositions suitable for use as a dielectric layer of a ceramic capacitor having internal electrodes made of a base metal such as Ni and a ceramic capacitor fabricated by employing such ceramic compositions as a dielectric layer thereof.

BACKGROUND OF THE INVENTION

[0002] Recently, a base metal, e.g., Ni, is widely used in forming internal electrodes of multilayer ceramic capacitors for the purpose of reducing manufacturing costs. In case the internal electrodes are composed of the base metal, it is required that chip-shaped laminated bodies including therein the internal electrodes be sintered in a reductive atmosphere in order to prevent an oxidization of the internal electrodes. Accordingly, a variety of reduction resistive dielectric ceramic compositions have been developed.

[0003] Recent trend towards ever more miniaturized and dense electric circuits intensifies a demand for a further scaled down multilayer ceramic capacitor with higher capacitance. Keeping up with such demand, there has been made an effort to fabricate thinner dielectric layers and to stack a greater number of the thus produced dielectric layers.

[0004] However, when the dielectric layers are thinned out, a voltage applied to a unit thickness intrinsically increases. Accordingly, the operating life of the dielectric layers is shortened and thus a reliability of the multilayer ceramic capacitor is also deteriorated.

SUMMARY OF THE INVENTION

[0005] It is, therefore, an object of the present invention to provide highly reliable dielectric ceramic compositions and ceramic capacitors prepared by employing such dielectric ceramic compositions in forming dielectric layers thereof, wherein the dielectric ceramic compositions exhibit such electrical characteristics as a dielectric constant equal to or greater than 10,000, a capacitance variation of −80% to +30% (based on a capacitance obtained at a temperature of +20° C.) in the temperature range from −25° C. to +85° C., a dielectric loss “tanδ” of 10.0% or less and an accelerated life of 200,000 seconds or greater.

[0006] In accordance with a preferred embodiment of the present invention, there is provided a dielectric ceramic composition comprising: 100 mol % of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti_(1−x)Zr_(x))O₃; 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re₂O₃; 0.1 to 0.4 mol % of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn₂O₃, V₂O₅ and Cr₂O₃, respectively; 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W, the contents of the oxides of Mo and W being calculated by assuming that the oxides thereof Mo₃O₃, WO₃, respectively; and a glass component including SiO₂, wherein x in the oxide of Ba(Ti_(1−x)Zr_(x))O₃ ranges from about 0.05 to about 0.26.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The above and other objects and features of the present invention will become apparent from the following description of a preferred embodiment given in conjunction with the accompanying drawings in which:

[0008]FIG. 1 represents a schematic cross sectional view illustrating a multilayer ceramic capacitor;

[0009]FIG. 2 is a triangular composition diagram for showing compositions of B₂O₃—SiO₂—MO in a unit of mol %; and

[0010]FIG. 3 sets forth a triangular composition diagram for illustrating compositions of Li₂O—SiO₂—MO in a unit of mol %.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Compound powders of BaCO₃, TiO₂, ZrO₂, Re₂O₃, MgO, Mn₂O₃ V₂O₅, Cr₂O₃, Mo₃, WO₃ and a glass component including SiO₂ were weighed in amounts as specified in the accompanying Tables 1-1 to 1-6 and mixed for about 20 hours by a wet method in a ball mill containing therein PSZ (partially sterilized zirconia) balls and water to thereby obtain a ceramic slurry. The produced ceramic slurry (containing 30% of water) was dehydrated and then dried by being heated at about 200° C. for 5 hours. It should be noted that “Re” is selected, e.g., from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y.

[0012] Thereafter, the dried ceramic slurry was ground and then calcined in air at about 800° C. for 3 hours. The calcined slurry was then crushed by employing a wet method in a ball mill added with ethanol for about 10 hours. Next, the crushed ceramic slurry was dried by being heated at about 200° C. for 5 hours, thereby obtaining the powder of the calcined ceramic slurry.

[0013] In a following step, a dielectric ceramic slurry was obtained by mixing and grinding 1000 g (100 parts by weight) of the powder of the calcined ceramic slurry, 15 wt % of an organic binder and 50 wt % of water in a ball mill, wherein the organic binder includes acrylic ester polymer, glycerin, and a solution of condensed phosphate.

[0014] Next, the dielectric slurry was subjected to a vacuum air separator to remove air bubbles therefrom and formed into a thin film coated on a polyester film by using a reverse roll coater. Thus produced ceramic thin film on the polyester film was heated and dried at about 100° C. and then diced to thereby obtain square ceramic green sheets having a thickness of about 5 μm and a size of about 10 cm×10 cm.

[0015] Meanwhile, 0.9 g of ethyl cellulose dissolved in 9.1 g of butyl carbitol and 10 g of Nickel powder having an average diameter of about 0.5 μm were loaded and stirred in a stirrer for 10 hours to form a conductive paste for use in forming internal electrodes of ceramic capacitors. Thereafter, the conductive paste was printed on the prepared ceramic green sheets to form conductive patterns thereon and then the printed conductive paste was dried.

[0016] Subsequently, ten ceramic green sheets having the conductive patterns thereon were stacked against each other with the conductive patterns facing upward, thereby forming a laminated body. Every two neighboring sheets were disposed in such a manner that the conductive patterns provided thereon were shifted by one half of a pattern size along the length direction. The laminated body also included one or more ceramic dummy sheets stacked against each of the uppermost and the lowermost ceramic green sheets having conductive patterns thereon, the ceramic dummy sheets representing ceramic green sheets without having conductive patterns thereon.

[0017] Next, the laminated body was pressed with a load of about 40 tons at about 50° C. along the stacking direction of the ceramic sheets in the laminated body. Afterwards, the pressed laminated body was diced into a multiplicity of chip shaped ceramic bodies having a size of about 3.2 mm×1.6 mm.

[0018] Thereafter, Ni external electrodes were formed at two opposite sides of each chip shaped ceramic body by, e.g., a dipping method, the internal electrodes being alternately exposed to the two opposite sides of each chip shaped ceramic body. Then, the chip shaped ceramic bodies were loaded into a furnace capable of controlling an atmosphere therein and the organic binder contained in the loaded ceramic bodies was removed by heating the furnace in an N₂ atmosphere. Then, the binder-removed chip shaped ceramic bodies were sintered at about 1200° C. in a non-oxidative atmosphere with oxygen partial pressure being in 10⁻⁵ to 10⁻⁸ atm order range. Thereafter, the sintered chip-shaped ceramic bodies were re-oxidized in a neutral atmosphere to thereby obtain multilayer ceramic capacitors as shown in FIG. 1, wherein reference numerals 10, 12 and 14 in the FIG. 1 represent dielectric layers, internal electrodes and external electrodes, respectively.

[0019] Tables 2-1 to 2-6 exhibit a measurement result of electrical characteristics obtained from the thus produced multilayer ceramic capacitors, wherein a thickness of each dielectric layer incorporated in the capacitors was about 3 μm.

[0020] The electrical characteristics of the multilayer ceramic capacitors were obtained as follows.

[0021] (A) Relative permittivity or dielectric constant ε_(s) was computed based on a facing area of a pair of neighboring internal electrodes, a thickness of a dielectric layer positioned between the pair of neighboring internal electrodes, and the capacitance of a multilayer ceramic capacitor obtained under the condition of applying at 20° C. a voltage of 1.0 V (root mean square value) with a frequency of 1 kHz.

[0022] (B) Dielectric loss tanδ (%) was obtained under the same condition as established for measuring the permittivity cited above.

[0023] (C) Resistivity (Ω cm) was acquired by measuring a resistance between a pair of external electrodes after DC 25 V was applied for 60 seconds at 20° C. The number following “E” in the notation of a resistivity value presented in the accompanying Tables 2-1 to 2-6 represents an order. For instance, 4.8E+12 represents 4.8×10¹².

[0024] (D) Accelerated life (second) was obtained by measuring time period until an insulation resistivity (ρ) becomes 1×10¹⁰ Ω cm in a DC electric field of 20 V/μm at 150° C.

[0025] (E) Capacitance variation ΔC/C₂₀ (%) was obtained by measuring capacitances at −25° C. and +85° C. in a thermostatic (or constant temperature) oven under the condition of applying a voltage of 1 V (rms value) with a frequency of 1 kHz, wherein C₂₀ represents a capacitance at 20° C. and Δ C represents the difference between C₂₀ and a capacitance measured at −25° C. or +85° C.

[0026] As clearly seen from Tables 1-1 to 1-6 and Tables 2-1 to 2-6, multilayer ceramic capacitors with highly improved reliability having permittivity (ε) equal to or greater than 10,000, capacitance variation ΔC/C₂₀ within the range from −80% to +30% at temperatures ranging from −25° C. to +85° C., tan δ of 10.0% or less and accelerated life of 200,000 seconds or greater could be obtained from the above samples sintered in a non-oxidative atmosphere even at a temperature of 1200° C. or lower in accordance with the present invention.

[0027] However, samples 1 to 3, 25 to 27, 29, 34, 36, 41, 42, 58, 61, 62, 66, 67, 71, 72, 75, 79, 82, 84 to 86, 108 to 111, 115, 116, 122, 123, 131, 137, 138, 142, 143, 146, 150, 153, 155, 159 (marked with “

” at the column of sample numbers in Tables) could not satisfy the above-specified electrical characteristics and further, when these samples are employed, a highly densified ceramic body may not be obtained by the sintering at 1200° C. Therefore, it appears that such samples fall outside a preferable compositional range of the present invention.

[0028] The reasons why the preferable compositional range for the dielectric ceramics in accordance with the present invention should be limited to certain values will now be described.

[0029] First, when the content of an oxide of a rare-earth element represented by Re is 0 mol % in terms of Re₂O₃ (i.e., assuming the oxide of Re is in the form of Re₂O₃) as in the sample 36, the tanδ thereof goes over 10.0% or capacitance variation ΔC/C₂₀ deviates from the range from −80% to +30% at temperatures ranging from −25° C. to +85° C.; whereas when the oxide of Re is set to be 0.25 mol % in terms of Re₂O₃ as in sample 37, the desired electrical characteristics can be successfully obtained.

[0030] Further, when the content of the oxide of the rare-earth element Re is 2.0 mol % in terms of Re₂O₃ as in the sample 41, a highly densified ceramic body may not be obtained by the sintering at 1200° C. However, when the content of the oxide of Re is set to be 1.5 mol % in terms of Re₂O₃ as in sample 40, the desired electrical characteristics can be successfully obtained.

[0031] Accordingly, the preferable range of the content of oxide of the rare-earth element Re is from 0.25 to 1.5 mol % in terms of Re₂O₃.

[0032] It is noted that same effects can be produced regardless of whether a single rare-earth element is used as in samples 43 to 53 or two or more of rare-earth elements are used together as in samples 54 to 57 as long as the above-described preferable content range of the rare-earth element Re is satisfied.

[0033] When the content of the oxide of Mg is 0 mol % in terms of MgO as in the sample 58, the tanδ thereof goes over 10.0% or capacitance variation ΔC/C₂₀ of the produced multilayer ceramic capacitors deviates from the range from −80% to +30% when the temperature varies from −25° C. to +85° C.; whereas when the oxide of Mg is set to be 0.1 mol % in terms of MgO as in sample 59, the desired electrical characteristics can be successfully obtained.

[0034] In addition, when the content of the oxide of Mg is 0.6 mol % in terms of MgO as in the sample 61, the relative permittivity of the produced multilayer ceramic capacitors may become equal to or less than 10,000 or the capacitance variation ΔC/C₂₀ of the produced multilayer ceramic capacitors deviates from the range from −80% to +30% when the temperature varies from −25° C. to +85° C.; and accordingly, the desired accelerated life cannot be obtained. However, when the content of the oxide of Mg is set to be 0.4 mol % in terms of MgO as in sample 60, the desired electrical characteristics can be successfully obtained.

[0035] Accordingly, the content of the oxide of Mg desirably ranges from 0.1 to 0.4 mol % in terms of MgO.

[0036] When the content of an oxide of each element Mn, V or Cr is 0.02 mol % in terms of Mn₂O₃, V₂O₅ or Cr₂O₃, as in the samples 1 to 3, the desired accelerated life of the produced multilayer ceramic capacitors may not be obtained; whereas when the total content of the oxides of Mn, V and Cr is set to be 0.03 mol % in terms of Mn₂O₃, V₂O₅ and Cr₂O₃, as in samples 4 to 6, the desired characteristics can be successfully attained.

[0037] Further, when the content of an oxide of Mn, V or Cr is 0.7 mol % in terms of Mn₂O₃, V₂O₅ or Cr₂O₃, as in the samples 25 to 27, the dielectric constant of the capacitors becomes equal to or less than 10,000. However, when the content of sum of the oxides of Mn, V and Cr is set to be 0.6 mol % in terms of Mn₂O₃, V₂O₅ and Cr₂O₃, as in samples 22 to 24, the desired characteristics can be successfully attained.

[0038] Accordingly, it is preferable that the total amount of oxides of Mn, V and Cr ranges from 0.03 to 0.6 mol % in terms of Mn₂O₃, V₂O₅ and Cr₂O₃.

[0039] It is to be noted that same effects can be obtained regardless of whether an oxide of one of the elements Mn, V and Cr as in samples 4 to 6 and 13 to 18 is used alone or two or more thereof are used together as in samples 7 to 12 and 19 to 24 as long as the total content thereof satisfies the above specified range.

[0040] Further, the dielectric ceramic composition in accordance with the present invention may further include one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu. In this case, it is preferable that a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn₂O₃, V₂O₅ and Cr₂O₃, respectively.

[0041] When the content of oxides of Mo and/or W is 0 mol % in terms of MoO₃ and WO₃ as in the samples 29, 116 and 123, the desired operating life can not be obtained; whereas when the content of oxides of Mo and/or W is 0.02 mol % in terms of MoO₃ and WO₃ as in samples 30, 117 and 124, the desired electrical characteristics can be successfully obtained.

[0042] Moreover, when the content of oxides of Mo and/or W is 0.35 mol % in terms of MoO₃ and WO₃ as in the samples 34, 122 and 137, the tanδ thereof may be deteriorated over 10.0% and the capacitance variation ΔC/C₂₀ exceeds the range from −80% to +30% with the temperature varying from −25° C. to +85° C. However, when the total content of oxides is set to be 0.3 mol % as in samples 33, 121 and 136, the desired electrical characteristics can be successfully obtained.

[0043] Accordingly, it is preferable that the total content of the oxides of Mo and W ranges from 0.02 to 0.3 mol % in terms of MoO₃ and WO₃.

[0044] Furthermore, same effects can be obtained regardless of whether the oxides of Mo and W are used separately as in the samples 30 to 33 and 117 to 121 or used together as in the samples 124 to 130 and 132 to 136.

[0045] The optimum range of the glass component varies depending on the constituents thereof.

[0046] First, in case the glass component is substantially formed of SiO₂ only, the optimum content of the glass component is as follows:

[0047] When the content of SiO₂ is 0.00 mol % as in the sample 111, a highly densified ceramic body may not be obtained by the sintering process at 1200° C.; whereas when the content of SiO₂ is set to be 0.2 mol % as in sample 112, the desired electrical characteristics can be successfully obtained.

[0048] Further, when the content of SiO₂ is 5.0 mol % as in the sample 115, the dielectric constant of the capacitors becomes equal to or less than 10,000 and accordingly the desired accelerated life may not be obtained; whereas when the content of SiO₂ is set to be 4.0 mol % as in sample 114, the desired electrical characteristics can be obtained.

[0049] Accordingly, the content of the glass component mainly formed of SiO₂ preferably ranges from 0.2 mol % and 4.0 mol %.

[0050] In case the glass component including SiO₂ is composed of Li₂O—BaO—TiO₂—SiO₂, the optimum range of the content of Li₂O—BaO—TiO₂—SiO₂ preferably is determined as follows:

[0051] When the total content of glass component Li₂O—BaO—TiO₂—SiO₂ is 0 mol % as in the sample 62, tanδ of the produced capacitor may be deteriorated over 10.0% or the desired accelerated life may not be obtained; whereas when the content of the glass component Li₂O—BaO—TiO₂—SiO₂ is 0.05 mol % as in sample 63, the desired electrical characteristics can be successfully attained.

[0052] Further, when the content of the glass component Li₂O—BaO—TiO₂—SiO₂ is 2.0 mol % as in the sample 66, the relative permittivity of the produced multilayer ceramic capacitor may fall below 10,000 or the desired accelerated life may not be attained; whereas when the content of the glass component Li₂O—BaO—TiO₂—SiO₂ is 1.0 mol % as in sample 65, the desired electrical characteristics can be obtained.

[0053] Accordingly, the total content of the glass component Li₂O—BaO—TiO₂—SiO₂ is preferably between 0.05 and 1.0 wt % inclusive.

[0054] In case the glass component including SiO₂ is composed of B₂O₃—SiO₂—MO (MO used herein represents one or more oxides selected from the group of BaO, SrO, CaO, MgO and ZnO), the preferable composition of B₂O₃—SiO₂—MO for obtaining desired electrical characteristics is within the range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order shown in a triangular composition diagram of FIG. 2, wherein the triangular composition diagram exhibits a composition of B₂O₃—SiO₂—MO in terms of their mol %. The first point A represents a composition containing 1 mol % of B₂O₃, 80 mol % of SiO₂ and 19 mol % of MO, a second point B represents a composition including 1 mol % of B₂O₃, 39 mol % of SiO₂ and 60 mol % of MO. The third point C represents a composition containing 29 mol % of B₂O₃, 1 mol % of SiO₂ and 70 mol % of MO. The fourth point D represents a composition containing 90 mol % of B₂O₃, 1 mol % of SiO₂ and 9 mol % of MO. The fifth point E represents a composition containing 90 mol % of B₂O₃, 9 mol % of SiO₂ and 1 mol % of MO and the sixth point F represents a composition containing 19 mol % of B₂O₃, 80 mol % of SiO₂ and 1 mol % of MO. If a B₂O₃—SiO₂—Mo composition is within the range defined with 6 points described above as in samples 73, 74, 76 to 78, 80, 81 and 83, the desired electrical characteristics can be obtained. However, if the composition is out of the range as in the samples 72, 75, 79 and 82, a highly densified ceramic body may not be attained at 1200° C.

[0055] Further, when the content of B₂O₃—SiO₂—MO is 0 wt % as in the sample 67, a highly densified ceramic body may not be obtained when sintered at 1200° C.; whereas when the content of B₂O₃—SiO₂—Mo is 0.05 wt % as in sample 68, the desired electrical characteristics can be successfully attained.

[0056] Still further, when the content of B₂O₃—SiO₂—Mo is 10.00 wt % as in the sample 71, the relative permittivity may become less than 10,000 or the desired accelerated life may not be obtained; whereas when the content of B₂O₃—SiO₂—Mo is set to be 5.00 wt % as in sample 70, the desired electrical characteristics can be obtained.

[0057] Accordingly, the content of B₂O₃—SiO₂—Mo preferably ranges from 0.05 to 5.0 wt %.

[0058] When the glass component including SiO₂ is composed of Li₂O—SiO₂—MO (Mo used herein represents one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO), the preferable compositional range for Li₂O—SiO₂—MO is within the range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order as shown in a triangular composition diagram of FIG. 3, wherein the triangular diagram shows a compositional of Li₂O—SiO₂—MO in a unit of mol %. The seventh point G represents a composition containing 1 mol % of Li₂O, 94 mol % of SiO₂ and 5 mol % of MO. The eighth point H represents a composition containing 1 mol % of Li₂O, 19 mol % of SiO₂ and 80 mol % of MO. The ninth point I represents a composition containing 19 mol % of Li₂O, 1 mol % of SiO₂ and 80 mol % of MO. The tenth point J represents a composition containing 89 mol % of Li₂O, 1 mol % of SiO₂ and 10 mol % of MO. The eleventh point K represents a composition containing 90 mol % of Li₂O₃, 9 mol % of SiO₂ and 1 mol % of MO and the twelfth point L represents a composition containing 5 mol % of Li₂O, 94 mol % of SiO₂ and 1 mol % of MO. If a Li₂O—SiO₂—Mo composition falls within the range defined by the 6 G-L, as in samples 144, 145, 147 to 149, 151, 152 and 154, the desired electrical characteristics can be obtained. However, if otherwise as in the samples 143, 146, 150 and 153, a highly densified ceramic body with a highly improved density may not be attained after being sintered at 1200° C. or the relative permittivity may become less than 10,000.

[0059] Further, when the content of Li₂O—SiO₂—MO is 0 wt % as in the sample 138, a highly densified ceramic body may not be obtained by the sintering process at 1200° C.; whereas when the content of Li₂O—SiO₂—MO is set as 0.05 wt % as in sample 139, the desired electrical characteristics can be acquired.

[0060] Still further, when the content of Li₂O—SiO₂—MO is 10.00 wt % as in the sample 142, a highly densified ceramic body may not be gained by the sintering at 1200° C.; whereas when the content of Li₂O—SiO₂—MO is set to be 5.00 wt % as in sample 141, the desired electrical characteristics can be successfully obtained.

[0061] Accordingly, the content of Li₂O—SiO₂—MO optimally ranges from 0.05 to 5.0 wt %.

[0062] When x in the oxide of Ba(Ti_(1−x)Zr_(x))O₃ is 0.00 as in the sample 155, the desired accelerated life may not be attained; whereas when x in the oxide of Ba(Ti_(1−x)Zr_(x))O₃ is 0.05 as in sample 156, the desired electrical characteristics can be successfully obtained.

[0063] Further, When x in the oxide of Ba(Ti_(1−x)Zr_(x))O₃ is 0.3 as in the sample 159, the relative permittivity may become less than 10,000; whereas when x in the oxide of Ba(Ti_(1−x)Zr_(x))O₃ is 0.26 as in the sample 158, the desired electrical characteristics can be successfully obtained.

[0064] Accordingly, it is preferable that the value of x in the oxide of Ba(Ti_(1−x)Zr_(x))O₃ is equal to or greater than 0.05 and equal to or less than 0.26.

[0065] The present invention can produce a multilayer ceramic capacitor capable of providing a desired accelerated life with a highly improved reliability, wherein the capacitor exhibits a relative permittivity εr of 10,000 or greater, tanδ of 10.0% or less and a capacitance variation ΔC/C₂₀ ranging from −80% to +30% with the temperature variances from −25° C. to +85° C.

[0066] It should be noted that other types of raw materials can be employed as source materials for obtaining the ceramic slurry. For instance, barium acetate or barium nitrate can be used instead of BaCO₃.

[0067] Although the present invention has been described with reference to the multilayer ceramic capacitors only, it should be apparent to those skilled in the art that the present invention can also be applied to single-layer ceramic capacitors.

[0068] While the invention has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims. TABLE 1-1 content of the glass composition of minor additives (mol %) component (wt %) Main component (mol %) rare-earth content sample composition (Re₂O₃) transition metal total #1 B₂O₃-SiO₂-MO ←mol number Ba Ti Zr Ba/(TiZr) element content MgO Mn₂O₃ V₂O₅ Cr₂O₃ content MoO₃ Li₂O- M B₂O₃ SiO₂ MO ratio   1 100 86 14 1.003 Ho 1.0 0.2 0.02 — — 0.02 0.1 0.1 — — — — —   2 100 86 14 1.003 Ho 1.0 0.2 — 0.02 — 0.02 0.1 0.1 — — — — —   3 100 86 14 1.003 Ho 1.0 0.2 — — 0.02 0.02 0.1 0.1 — — — — —  4 100 86 14 1.003 Ho 1.0 0.2 0.03 — — 0.03 0.1 0.1 — — — — —  5 100 86 14 1.003 Ho 1.0 0.2 — 0.03 — 0.03 0.1 0.1 — — — — —  6 100 86 14 1.003 Ho 1.0 0.2 — — 0.03 0.03 0.1 0.1 — — — — —  7 100 86 14 1.003 Ho 1.0 0.2 0.01 0.02 — 0.03 0.1 0.1 — — — — —  8 100 86 14 1.003 Ho 1.0 0.2 0.05 0.02 — 0.07 0.1 0.1 — — — — —  9 100 86 14 1.003 Ho 1.0 0.2 0.05 — 0.1 0.15 0.1 0.1 — — — — — 10 100 86 14 1.003 Ho 1.0 0.2 0.05 0.01 0.1 0.16 0.1 0.1 — — — — — 11 100 86 14 1.003 Ho 1.0 0.2 0.1 0.05 0.1 0.25 0.1 0.1 — — — — — 12 100 86 14 1.003 Ho 1.0 0.2 0.1 0.1 0.1 0.3 0.1 0.1 — — — — — 13 100 86 14 1.003 Ho 1.0 0.2 0.3 — — 0.3 0.1 0.1 — — — — — 14 100 86 14 1.003 Ho 1.0 0.2 — 0.3 — 0.3 0.1 0.1 — — — — — 15 100 86 14 1.003 Ho 1.0 0.2 — — 0.3 0.3 0.1 0.1 — — — — — 16 100 86 14 1.003 Ho 1.0 0.2 0.6 — — 0.6 0.1 0.1 — — — — — 17 100 86 14 1.003 Ho 1.0 0.2 — 0.6 — 0.6 0.1 0.1 — — — — — 18 100 86 14 1.003 Ho 1.0 0.2 — — 0.6 0.6 0.1 0.1 — — — — — 19 100 86 14 1.003 Ho 1.0 0.2 0.3 0.3 — 0.6 0.1 0.1 — — — — — 20 100 86 14 1.003 Ho 1.0 0.2 0.3 — 0.3 0.6 0.1 0.1 — — — — — 21 100 86 14 1.003 Ho 1.0 0.2 — 0.3 0.3 0.6 0.1 0.1 — — — — — 22 100 86 14 1.003 Ho 1.0 0.2 0.2 — 0.4 0.6 0.1 0.1 — — — — — 23 100 86 14 1.003 Ho 1.0 0.2 0.1 — 0.5 0.6 0.1 0.1 — — — — — 24 100 86 14 1.003 Ho 1.0 0.2 0.2 0.2 0.2 0.6 0.1 0.1 — — — — —  25 100 86 14 1.003 Ho 1.0 0.2 0.7 — — 0.7 0.1 0.1 — — — — —  26 100 86 14 1.003 Ho 1.0 0.2 — 0.7 — 0.7 0.1 0.1 — — — — —  27 100 86 14 1.003 Ho 1.0 0.2 — — 0.7 0.7 0.1 0.1 — — — — — 28 100 86 14 1.003 Ho 1.0 0.2 0.2 0.1 0.4 0.7 0.1 0.1 — — — — —  29 100 86 14 1.003 Ho 1.0 0.2 0.05 0.1 0.1 0.25 0 0.1 — — — — —

[0069] TABLE 1-2 content of the glass composition of minor additives (mol %) component (wt %) Main component (mol %) rare-earth content sample composition (Re₂O₃) transition metal total #1 B₂O₃-SiO₂-MO ←mol number Ba Ti Zr Ba/(TiZr) element content MgO Mn₂O₃ V₂O₅ Cr₂O₃ content MoO₃ Li₂O- M B₂O₃ SiO₂ MO ratio 30 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 0.1 0.25 0.025 0.1 — — — — — 31 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 0.1 0.25 0.05 0.1 — — — — — 32 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 0.1 0.25 0.1 0.1 — — — — — 33 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 0.1 0.25 0.3 0.1 — — — — —  34 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 0.1 0.25 0.35 0.1 — — — — — 35 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — —  36 100.3 86 14 1.003 Ho 0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 37 100.3 86 14 1.003 Ho 0.25 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 38 100.3 86 14 1.003 Ho 0.5 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 39 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 40 100.3 86 14 1.003 Ho 1.5 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — —  41 100.3 86 14 1.003 Ho 2.0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — —  42 100.3 86 14 1.003 Ho 4.0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 43 100.3 86 14 1.003 Sm 0.25 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 44 100.3 86 14 1.003 Sm 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 45 100.3 86 14 1.003 Eu 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 46 100.3 86 14 1.003 Gd 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 47 100.3 86 14 1.003 Tb 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 48 100.3 86 14 1.003 Dy 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 49 100.3 86 14 1.003 Er 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 50 100.3 86 14 1.003 Tm 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 51 100.3 86 14 1.003 Yb 0.75 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 52 100.3 86 14 1.003 Yb 1.0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 53 100.3 86 14 1.003 Y 1.0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 54 100.3 86 14 1.003 Ho/Dy 0.5/0.5 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 55 100.3 86 14 1.003 Ho/Dy/Yb 5/0.5/0. 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 56 100.3 86 14 1.003 Sm/Ho/Yb 2/0.5/0. 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — — 57 100.3 86 14 1.003 Sm/Yb 0.5/1.0 0.2 0.15 0.05 — 0.2 0.1 0.1 — — — — —  58 100.3 86 14 1.003 Ho 1 0 0.15 0.05 — 0.2 0.1 0.1 — — — — —

[0070] TABLE 1-3 content of the glass composition of minor additives (mol %) component (wt %) Main component (mol %) rare-earth content sample composition (Re₂O₃) transition metal total #1 B₂O₃-SiO₂-MO ←mol number Ba Ti Zr Ba/(TiZr) element content MgO Mn₂O₃ V₂O₅ Cr₂O₃ content MoO₃ Li₂O- M B₂O₃ SiO₂ MO ratio 59 100.3 86 14 1.003 Ho 1 0.1 0.15 0.05 — 0.2 0.1 0.1 — — — — — 60 100.3 86 14 1.003 Ho 1 0.4 0.15 0.05 — 0.2 0.1 0.1 — — — — —  61 100.3 86 14 1.003 Ho 1 0.6 0.15 0.05 — 0.2 0.1 0.1 — — — — —  62 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 — 0.2 0.1 0 — — — — — 63 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 — 0.2 0.1 0.05 — — — — — 64 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 — 0.2 0.1 0.5 — — — — — 65 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 — 0.2 1.1 1 — — — — —  66 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 — 0.2 2.1 2 — — — — —  67 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 15 65 20 0.00 68 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 15 65 20 0.05 69 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 15 65 20 2.00 70 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 15 65 20 5.00  71 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 15 65 20 10.00  72 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 95 4 1 1.00 73 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 90 9 1 1.00 74 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 90 1 9 1.00  75 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 50 50 0 1.00 76 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 20 70 10 1.00 77 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 19 80 1 1.00 78 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 1 80 19 1.00  79 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 4 95 1 1.00 80 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 1 39 60 1.00 81 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 29 1 70 1.00  82 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 4 5 95 1.00 83 100.3 86 14 1.003 Ho 1 0.2 0.15 0.05 0.2 0.4 0.05 — Ca 20 30 50 1.00

[0071] TABLE 1-4 content of the glass composition of minor additives (mol %) component (wt %) Main component (mol %) rare-earth content sample composition (Re₂O₃) transition metal total #1 B₂O₃-SiO₂-MO ←mol number Ba Ti Zr Ba/(TiZr) element content MgO Mn₂O₃ V₂O₅ Cr₂O₃ content MoO₃ Li₂O- M B₂O₃ SiO₂ MO ratio   84 100.3 86 14 1.003 Ho 1.0 0.2  0.02 — — 0.02 0.05 0.05 0.1 Ba 15 20 1.00   85 100.3 86 14 1.003 Ho 1.0 0.2 —  0.02 — 0.02 0.05 0.05 0.1 Ba 15 20 1.00   86 100.3 86 14 1.003 Ho 1.0 0.2 — —  0.02 0.02 0.05 0.05 0.1 Ba 15 20 1.00  87 100.3 86 14 1.003 Ho 1.0 0.2  0.03 — — 0.03 0.05 0.05 0.1 Ca 15 20 1.00  88 100.3 86 14 1.003 Ho 1.0 0.2 —  0.03 — 0.03 0.05 0.05 0.1 Ca 15 20 1.00  89 100.3 86 14 1.003 Ho 1.0 0.2 — —  0.03 0.03 0.05 0.05 0.1 Ca 15 20 1.00  90 100.3 86 14 1.003 Ho 1.0 0.2  0.01  0.02 — 0.03 0.05 0.05 0.1 Sr 15 20 1.00  91 100.3 86 14 1.003 Ho 1.0 0.2  0.05  0.02 — 0.07 0.05 0.05 0.1 Sr 15 20 1.00  92 100.3 86 14 1.003 Ho 1.0 0.2  0.05 — 0.1 0.15 0.05 0.05 0.1 Sr 15 20 1.00  93 100.3 86 14 1.003 Ho 1.0 0.2  0.05  0.01 0.1 0.16 0.05 0.05 0.1 Sr 15 20 1.00  94 100.3 86 14 1.003 Ho 1.0 0.2 0.1  0.05 0.1 0.25 0.05 0.05 0.1 Mg 15 20 1.00  95 100.3 86 14 1.003 Ho 1.0 0.2 0.1 0.1 0.1 0.3 0.05 0.05 0.1 Mg 15 20 1.00  96 100.3 86 14 1.003 Ho 1.0 0.2 0.3 — — 0.3 0.05 0.05 0.1 Mg 15 20 1.00  97 100.3 86 14 1.003 Ho 1.0 0.2 — 0.3 — 0.3 0.05 0.05 0.1 Mg 15 20 1.00  98 100.3 86 14 1.003 Ho 1.0 0.2 — — 0.3 0.3 0.05 0.05 0.1 Mg 15 20 1.00  99 100.3 86 14 1.003 Ho 1.0 0.2 0.6 — — 0.6 0.05 0.05 0.1 Zn 15 20 1.00 100 100.3 86 14 1.003 Ho 1.0 0.2 — 0.6 — 0.6 0.05 0.05 0.1 Zn 15 20 1.00 101 100.3 86 14 1.003 Ho 1.0 0.2 — — 0.6 0.6 0.05 0.05 0.1 Zn 15 20 1.00 102 100.3 86 14 1.003 Ho 1.0 0.2 0.3 0.3 — 0.6 0.05 0.05 0.1 Ba 15 20 1.00 103 100.3 86 14 1.003 Ho 1.0 0.2 0.3 — 0.3 0.6 0.05 0.05 0.1 Ba 15 20 1.00 104 100.3 86 14 1.003 Ho 1.0 0.2 — 0.3 0.3 0.6 0.05 0.05 0.1 Ba 15 20 1.00 105 100.3 86 14 1.003 Ho 1.0 0.2 0.2 — 0.4 0.6 0.05 0.05 0.1 Ba 15 20 1.00 106 100.3 86 14 1.003 Ho 1.0 0.2 0.1 — 0.5 0.6 0.05 0.05 0.1 Ba 15 20 1.00 107 100.3 86 14 1.003 Ho 1.0 0.2 0.2 0.2 0.2 0.6 0.05 0.05 0.1 Ba 15 20 1.00  108 100.3 86 14 1.003 Ho 1.0 0.2 0.7 — — 0.7 0.05 0.05 0.1 Ba/Ca 15 20 1.00  109 100.3 86 14 1.003 Ho 1.0 0.2 — 0.7 — 0.7 0.05 0.05 0.1 Ba/Ca 15 20 1.00  110 100.3 86 14 1.003 Ho 1.0 0.2 — — 0.7 0.7 0.05 0.05 0.1 Ba/Ca 15 20 1.00

[0072] TABLE 1-5 composition of minor additives (mol %) main component (mol %) rare-earth sample composition (Re₂O₃) transition metal total total (wt %) number Ba Ti Zr Ba/(TiZr) element content MgO Mn₂O₃ V₂O₅ Cr₂O₃ content MoO₃ WO₃ content SiO₂  111 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 0 112 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1   0.2 113 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 1 114 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 4  115 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 5  116 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 — 0 0 — 117 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 — 0.025 0.025 — 118 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 — 0.05 0.05 — 119 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 — 0.1 0.1 — 120 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 — 0.2 0.2 — 121 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 — 0.3 0.3 —  122 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 — 0.35 0.35 —  123 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0 0 0 — 124 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.01 0.01 0.02 — 125 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.02 0.02 0.04 — 126 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0 0.05 0.05 — 127 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.025 0.05 0.075 — 128 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.05 0.05 0.1 — 129 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.1 0.05 0.15 — 130 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.2 0.05 0.25 —  131 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.3 0.05 0.35 — 132 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.05 0 0.05 — 133 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.05 0.025 0.075 — 134 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.05 0.05 0.1 — 135 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.05 0.1 0.15 — 136 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.05 0.2 0.25 —  137 100.3 86 14 1.003 Ho 1.0 0.2 0.05 0.1 — 0.15 0.05 0.3 0.35 —

[0073] TABLE 1-6 content of the glass component main component composition of minor additives (mol %) (wt %) (mol %) rare-earth content content sample composition Ba/ (Re₂O₃) transition metal total ←mol B₂O₃-SiO₂-MO ←mol number Ba Ti Zr (TiZr) element content MgO Mn₂O₃ V₂O₅ Cr₂O₃ content MoO₃ WO₃ ratio M B₂O₃ SiO₂ MO ratio  138 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 15 65 20 0.00 139 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 15 65 20 0.05 140 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 15 65 20 2.00 141 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 15 65 20 5.00  142 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 15 65 20 10.00  143 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 95 4 1 1.00 144 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 90 9 1 1.00 145 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 89 1 10 1.00  146 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 50 50 0 1.00 147 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 20 70 10 1.00 148 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 5 94 1 1.00 149 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 1 94 5 1.00  150 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 4 95 1 1.00 151 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 1 79 20 1.00 152 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 19 1 80 1.00  153 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 4 5 95 1.00 154 100.3 86 14 1.003 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 20 30 50 1.00  155 100.5 100 0 1.005 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 20 30 50 1.00 156 100.5 95 5 1.005 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 20 30 50 1.00 157 100.5 80 20 1.005 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 20 30 50 1.00 158 100.5 74 26 1.005 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 20 30 50 1.00  159 100.5 70 30 1.005 Ho 1.0 0.2 0.15 0.05 — 0.2 0.05 0.05 0.1 Ca 20 30 50 1.00

[0074] TABLE 2-1 capacitance sample sintering tanδ resistivity(Ω · cm) at room variation(ΔC/ΔC₂₀, %) accelerated number temperature (° C.) permittivity (%) temperature −25° C. +85° C. life(sec)   1 1200 13099 7.32 8.85E + 12 −42.2 −68.3 127865   2 1200 15463 8.50 2.28E + 12 −40.8 −70.2 67865   3 1200 11498 7.64 4.37E + 12 −41.0 −72.6 157654  4 1200 11233 6.68 1.12E + 13 −43.7 −73.4 467600  5 1200 14455 7.03 9.68E + 12 −43.7 −71.6 497600  6 1200 13023 5.72 6.50E + 12 −43.2 −68.4 402800  7 1200 15703 5.92 6.01E + 12 −40.1 −72.7 444200  8 1200 13693 7.03 7.39E + 12 −43.3 −76.3 417800  9 1200 11833 6.79 3.37E + 12 −41.5 −76.9 341900 10 1200 12856 6.12 1.18E + 13 −42.4 −68.4 282500 11 1200 14985 5.68 5.32E + 12 −41.4 −74.6 359900 12 1200 13913 5.62 1.02E + 13 −43.1 −73.2 468200 13 1200 14123 8.28 9.13E + 12 −41.6 −69.5 437000 14 1200 15088 6.91 1.03E + 13 −41.5 −69.2 498800 15 1200 12531 5.11 8.93E + 12 −43.8 −73.5 448700 16 1200 14346 7.23 2.46E + 12 −41.5 −69.2 363500 17 1200 12689 5.57 4.71E + 12 −40.3 −69.6 374000 18 1200 15769 7.50 1.09E + 13 −41.0 −73.5 239600 19 1200 15674 6.02 2.86E + 12 −42.9 −67.3 358700 20 1200 12688 8.98 8.06E + 12 −42.4 −77.0 241100 21 1200 12655 8.51 3.18E + 12 −40.3 −68.7 426500 22 1200 15763 8.96 8.99E + 12 −41.3 −77.0 342500 23 1200 14045 7.83 8.92E + 12 −41.7 −76.7 245600 24 1200 11229 5.19 6.13E + 12 −43.2 −71.7 482900  25 1200 8654 5.54 5.94E + 12 −40.6 −71.7 464000  26 1200 6543 6.05 1.17E + 13 −42.1 −67.4 455600  27 1200 7698 6.17 6.36E + 12 −40.6 −74.9 86432 28 1200 12612 5.52 9.11E + 12 −43.0 −74.9 303200  29 1200 13498 6.48 5.75E + 12 −41.5 −67.3 134242

[0075] TABLE 2-2 capacitance sample sintering tanδ resistivity(Ω · cm) at room variation(ΔC/ΔC₂₀, %) accelerated number temperature (° C.) permittivity (%) temperature −25° C. +85° C. life(sec) 31 1200 13422 6.06 3.56E + 12 −42.2 −72.0 351200 32 1200 12846 7.28 6.21E + 12 −40.6 −68.2 362600 33 1200 15962 8.28 2,13E + 12 −42.9 −72.2 472700  34 1200 11320 12.30 3.81E + 12 −40.9 −67.1 237500 35 1200 11439 6.04 1.19E + 13 −43.5 −67.9 358100  36 1200 14038 11.90 8.58E + 12 −43.1 −84.2 494600 37 1200 15633 5.45 5.78E + 12 −42.0 −72.3 364400 38 1200 13383 5.84 1.11E + 13 −41.7 −70.7 228500 39 1200 13750 5.01 9.38E + 12 −44.0 −78.5 294200 40 1200 12731 6.14 1.15E + 13 −42.8 −68.8 298700  41 1200 incapable of obtaining a sintered ceramic with high density  42 1200 incapable of obtaining a sintered ceramic with high density 43 1200 15648 8.33 1.13E + 13 −41.6 −73.3 484700 44 1200 12850 8.91 4.13E + 12 −42.4 −72.7 356900 45 1200 14909 8.16 7,33E + 12 −41.8 −76.9 429500 46 1200 13518 6.04 4.59E + 12 −40.4 −77.4 390200 47 1200 15901 7.74 9.84E + 12 −40.7 −67.3 391700 48 1200 11935 6.32 8.41E + 12 −43.1 −74.0 450800 49 1200 12972 8.73 1.08E + 13 −43.1 −67.6 433100 50 1200 12213 5.08 5.45E + 12 −43.6 −76.5 438200 51 1200 14480 7.04 6.96E + 12 −41.3 −70.0 271400 52 1200 12133 5.32 3.31E + 12 −41.6 −78.9 353600 53 1200 11208 8.76 9.45E + 12 −43.4 −69.1 453500 54 1200 11949 7.42 1.14E + 13 −41.2 −77.5 314000 55 1200 14032 5.53 8.56E + 12 −40.7 −76.9 374000 56 1200 15576 5.28 4.31E + 12 −40.9 −78.2 378800 57 1200 14391 8.19 9.71E + 12 −42.2 −73.0 214400  58 1200 23129 16.80 2.38E + 12 −87.9 −67.5 454700

[0076] TABLE 2-3 capacitance sample sintering tanδ resistivity(Ω · cm) at room variation(ΔC/ΔC₂₀, %) accelerated number temperature (° C.) permittivity (%) temperature −25° C. +85° C. life(sec) 59 1200 14382 8.58 7.18E + 12 −41.4 −71.6 473900 60 1200 15968 8.96 6.33E + 12 −40.8 −75.2 334100  61 1200 8769 3.80 2.27E + 12 −42.7 −83.9 109886  62 1200 12588 13.10 3.73E + 12 −41.1 −74.0 76432 63 1200 13752 5.19 4.84E + 12 −43.1 −68.2 275000 64 1200 15777 8.25 9.00E + 12 −41.2 −69.3 430400 65 1200 12670 6.18 5.67E + 12 −42.9 −70.2 335000  66 1200 8438 5.81 9.13E + 12 −42.5 −78.8 5326  67 1200 incapable of obtaining a sintered ceramic with high density 68 1200 12238 8.24 9.18E + 12 −40.2 −70.4 218600 69 1200 11588 7.84 8.62E + 12 −43.0 −69.3 220100 70 1200 15311 6.23 6.42E + 12 −40.1 −70.7 209000  71 1200 5988 4.10 6.84E + 12 −40.6 −76.4 7621  72 1200 incapable of obtaining a sintered ceramic with high density 73 1200 15494 7.95 4.80E + 12 −42.6 −75.9 478400 74 1200 11922 7.28 6.91E + 12 −41.4 −67.8 339800  75 1200 incapable of obtaining a sintered ceramic with high density 76 1200 15650 5.88 3.79E + 12 −42.5 −75.5 446600 77 1200 12793 8.01 1.04E + 13 −41.7 −73.5 458600 78 1200 13733 5.53 5.32E + 12 −42.2 −70.5 341000  79 1200 incapable of obtaining a sintered ceramic with high density 80 1200 12016 5.22 2.37E + 12 −42.1 −68.3 443000 81 1200 14720 5.58 8.02E + 12 −41.9 −68.7 223100  82 1200 incapable of obtaining a sintered ceramic with high density 83 1200 12815 8.75 5.99E + 12 −40.6 −77.5 435800

[0077] TABLE 2-4 capacitance sample sintering tanδ resistivity(Ω · cm) at room variation(ΔC/ΔC₂₀, %) accelerated number temperature (° C.) permittivity (%) temperature −25° C. +85° C. life(sec)   84 1200 15453 8.20 9.87E + 12 −40.3 −78.5 7534   85 1200 11309 7.97 7.07E + 12 −42.3 −74.6 24546   86 1200 13496 7.36 2.21E + 12 −41.4 −77.7 6435  87 1200 15088 7.02 4.57E + 12 −40.6 −71.4 461900  88 1200 14189 7.26 9.36E + 12 −42.3 −72.4 261800  89 1200 15832 7.01 1.18E + 13 −41.4 −79.0 451700  90 1200 14417 6.16 7.57E + 12 −42.8 −67.7 239900  91 1200 14733 5.92 1.OOE + 13 −40.6 −73.0 469400  92 1200 14194 7.84 2.06E + 12 −43.7 −71.0 374000  93 1200 14177 6.43 4.81E + 12 −43.5 −67.1 412400  94 1200 15779 5.68 4.99E + 12 −40.3 −71.6 366500  95 1200 14209 8.93 1.18E + 13 −43.6 −73.5 376700  96 1200 14727 8.85 1.18E + 13 −41.4 −67.7 366800  97 1200 12523 7.34 8.38E + 12 −40.3 −72.4 247000  98 1200 11089 8.54 7.97E + 12 −40.2 −71.9 348500  99 1200 13442 7.80 2.54E + 12 −43.5 −68.5 256700 100 1200 15667 6.21 7.94E + 12 −42.2 −77.4 486500 101 1200 12847 8.47 3.12E + 12 −40.2 −68.2 407000 102 1200 12266 8.72 3.59E + 12 −43.5 −75.8 427400 103 1200 14965 8.79 8.53E + 12 −43.8 −69.0 362600 104 1200 12794 8.60 9.62E + 12 −41.1 −78.8 292100 105 1200 13163 7.96 1.13E + 13 −43.4 −72.9 315200 106 1200 12545 6.63 6.17E + 12 −41.9 −75.7 417800 107 1200 11027 5.57 6.52E + 12 −42.9 −67.6 255200  108 1200 7259 5.12 4.80E + 12 −40.1 −73.7 235700  109 1200 6439 3.53 5.37E + 12 −41.5 −70.8 369500  110 1200 2543 2.76 4.09E + 12 −41.5 −70.3 43455

[0078] TABLE 2-5 capacitance sample sintering tanδ resistivity(Ω · cm) at room variation(ΔC/ΔC₂₀, %) accelerated number temperature(° C.) permittivity (%) temperature −25° C. +85° C. life(sec)  111 1200 incapable of obtaining a sintered ceramic with high density 112 1200 11542 5.28 7.42E + 12 −43.5 −76.0 342500 113 1200 12319 5.78 1.15E + 13 −40.5 −71.2 455900 114 1200 15522 8.16 8.41E + 12 −40.1 −76.5 382100  115 1200 8134 2.88 5.08E + 12 −42.6 −72.9 25442  116 1200 18751 6.19 5.44E + 12 −40.6 −89.4 43676 117 1200 14498 7.00 1.01E + 13 −43.8 −67.3 291200 118 1200 15720 7.15 1.15E + 13 −41.0 −70.1 409700 119 1200 11067 6.45 5.03E + 12 −43.7 −70.9 377300 120 1200 14148 5.95 1.10E + 13 −40.5 −72.2 353900 121 1200 14509 6.22 2.45E + 12 −41.0 −76.7 410900  122 1200 20862 12.40 1.11E + 13 −86.3 −43.8 406100  123 1200 13545 8.80 4.33E + 12 −42.1 −70.7 36532 124 1200 14716 5.59 5.64E + 12 −43.0 −68.7 337100 125 1200 11704 7.24 5.09E + 12 −43.1 −73.8 315200 126 1200 12301 8.39 1.01E + 13 −42.8 −68.9 363200 127 1200 15933 8.23 5.32E + 12 −41.7 −72.9 239900 128 1200 13212 8.17 5.92E + 12 −43.3 −71.0 492500 129 1200 13096 8.58 6.45E + 12 −40.8 −71.4 244700 130 1200 11101 8.51 4.01E + 12 −42.0 −77.5 266000  131 1200 23786 15.80 2.27E + 12 −82.0 −41.9 223700 132 1200 11292 5.65 4.01E + 12 −43.6 −77.6 401600 133 1200 11672 8.67 1.10E + 13 −42.1 −68.2 361400 134 1200 12236 7.80 1.14E + 13 −42.6 −71.2 489500 135 1200 11682 8.57 1.11E + 13 −42.4 −77.9 411500 136 1200 11435 5.34 5.26E + 12 −43.0 −71.1 486800  137 1200 28765 17.30 9.26E + 12 −43.1 −67.4 274100

[0079] TABLE 2-6 capacitance sample sintering tanδ resistivity(Ω · cm) at room variation(ΔC/ΔC₂₀, %) accelerated number temperature(° C.) permittivity (%) temperature −25° C. +85° C. life(sec)  138 1200 incapable of obtaining a sintered ceramic with high density 139 1200 14744 8.85 6.46E + 12 −42.3 −76.7 394400 140 1200 12027 8.98 6.66E + 12 −42.4 −69.7 276500 141 1200 13352 6.43 1.19E + 13 −40.4 −68.5 467900  142 1200 incapable of obtaining a sintered ceramic with high density  143 1200 7612 2.98 8.92E + 12 −42.5 −74.4 2362 144 1200 11359 8.96 5.98E + 12 −41.8 −68.7 458000 145 1200 11423 8.81 6.07E + 12 −43.9 −70.3 331400  146 1200 incapable of obtaining a sintered ceramic with high density 147 1200 12283 7.34 2.04E + 12 −41.2 −78.6 209600 148 1200 13395 8.17 7.14E + 12 −40.9 −68.3 264500 149 1200 13730 5.70 6.00E + 12 −43.0 −76.4 372500  150 1200 incapable of obtaining a sintered ceramic with high density 151 1200 15706 5.27 3.93E + 12 −41.2 −72.4 283400 152 1200 13012 8.55 8.39E + 12 −43.0 −71.3 360200  153 1200 incapable of obtaining a sintered ceramic with high density 154 1200 14940 7.43 6.34E + 12 −40.5 −67.4 380300  155 1200 16485 5.68 8.84E + 12 −43.3 −68.6 12083 156 1200 14274 7.39 5.67E + 12 −40.5 −78.0 250700 157 1200 12831 6.37 5.09E + 12 −43.9 −74.0 431300 158 1200 12802 7.68 9.38E + 12 −41.7 −70.1 362300  159 1200 7524 8.39 7.21E + 12 −40.3 −72.7 344000 

What is claimed is:
 1. A dielectric ceramic composition comprising: 100 mol % of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti_(1−x)Zr_(x))O₃; 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re₂O₃; 0.1 to 0.4 mol % of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn₂O₃, V₂O₅ and Cr₂O₃, respectively; 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W, the contents of the oxides of Mo and W being calculated by assuming that the oxides thereof Mo₃O₃, WO₃, respectively; and a glass component including SiO₂, wherein x in the oxide of Ba(Ti_(1−x)Zr_(x))O₃ ranges from about 0.05 to about 0.26.
 2. The dielectric ceramic composition of claim 1, wherein the glass component is composed of Li₂O—BaO—TiO₂—SiO₂ and the content thereof ranges from 0.05 to 1.0 wt %.
 3. The dielectric ceramic composition of claim 1, wherein the glass component is composed of B₂O₃—SiO₂—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein a composition of B₂O₃—SiO₂—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order in a triangular composition diagram exhibiting compositional amounts of B₂O₃, SiO₂ and Mo in a unit of mol %, and wherein a point A represents a composition including 1 mol % of B₂O₃, 80 mol % of SiO₂ and 19 mol % of MO, a point B represents a composition including 1 mol % of B₂O₃, 39 mol % of SiO₂ and 60 mol % of MO, a point C represents a composition including 29 mol % of B₂O₃, 1 mol % of SiO₂ and 70 mol % of MO, a point D represents a composition including 90 mol % of B₂O₃, 1 mol % of SiO₂ and 9 mol % of MO, a point E represents a composition including 90 mol % of B₂O₃, 9 mol % of SiO₂ and 1 mol % of MO and a point F represents a composition including 19 mol % of B₂O₃, 80 mol % of SiO₂ and 1 mol % of MO, a content of the composition B₂O₃—SiO₂—MO ranging from 0.05 to 5.0 wt %.
 4. The dielectric ceramic composition of claim 1, wherein the glass component is substantially composed of SiO₂ and a content thereof is 0.20 to 4.0 mol %.
 5. The dielectric ceramic composition of claim 1, wherein the glass component is composed of Li₂O—SiO₂—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein the composition of Li₂O—SiO₂—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order in a triangular composition diagram showing compositional amounts of Li₂O, SiO₂ and MO in a unit of mol %, and wherein a point G represents a composition including 1 mol % of Li₂O, 94 mol % of SiO₂ and 5 mol % of MO, a point H represents a composition including 1 mol % of Li₂O, 19 mol % of SiO₂ and 80 mol % of MO, a point I represents a composition including 19 mol % of Li₂O, 1 mol % of SiO₂ and 80 mol % of MO, a point J represents a composition including 89 mol % of Li₂O, 1 mol % of SiO₂ and 10 mol % of MO, a point K represents a composition including 90 mol % of Li₂O₃, 9 mol % of SiO₂ and 1 mol % of MO and a point L represents a composition including 5 mol % of Li₂O, 94 mol % of SiO₂ and 1 mol % of MO, a content of the composition Li₂O—SiO₂—MO ranging from 0.05 to 5.0 wt %.
 6. The dielectric ceramic composition of claim 1, further comprising one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu and wherein a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn₂O₃, V₂O₅ and Cr₂O₃, respectively.
 7. A ceramic capacitor comprising one or more dielectric layers made of the dielectric ceramic composition of claim
 1. 8. The ceramic capacitor of claim 7, wherein the glass component is composed of Li₂O—BaO—TiO₂—SiO₂ and the content thereof ranges from 0.05 to 1.0 wt %.
 9. The ceramic capacitor of claim 7, wherein the glass component is composed of B₂O₃—SiO₂—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein a composition of B₂O₃—SiO₂—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order in a triangular composition diagram exhibiting compositional amounts of B₂O₃, SiO₂ and Mo in a unit of mol %, and wherein a point A represents a composition including 1 mol % of B₂O₃, 80 mol % of SiO₂ and 19 mol % of MO, a point B represents a composition including 1 mol % of B₂O₃, 39 mol % of SiO₂ and 60 mol % of MO, a point C represents a composition including 29 mol % of B₂O₃, 1 mol % of SiO₂ and 70 mol % of MO, a point D represents a composition including 90 mol % of B₂O₃, 1 mol % of SiO₂ and 9 mol % of MO, a point E represents a composition including 90 mol % of B₂O₃, 9 mol % of SiO₂ and 1 mol % of MO and a point F represents a composition including 19 mol % of B₂O₃, 80 mol % of SiO₂ and 1 mol % of MO, a content of the composition B₂O₃—SiO₂—MO ranging from 0.05 to 5.0 wt %.
 10. The ceramic capacitor of claim 7, wherein the glass component is substantially composed of SiO₂ and a content thereof is 0.20 to 4.0 mol %.
 11. The ceramic capacitor of claim 7, wherein the glass component is composed of Li₂O—SiO₂—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein the composition of Li₂O—SiO₂—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order in a triangular composition diagram showing compositional amounts of Li₂O, SiO₂ and MO in a unit of mol %, and wherein a point G represents a composition including 1 mol % of Li₂O, 94 mol % of SiO₂ and 5 mol % of MO, a point H represents a composition including 1 mol % of Li₂O, 19 mol % of SiO₂ and 80 mol % of MO, a point I represents a composition including 19 mol % of Li₂O, 1 mol % of SiO₂ and 80 mol % of MO, a point J represents a composition including 89 mol % of Li₂O, 1 mol % of SiO₂ and 10 mol % of MO, a point K represents a composition including 90 mol % of Li₂O₃, 9 mol % of SiO₂ and 1 mol % of MO and a point L represents a composition including 5 mol % of Li₂O, 94 mol % of SiO₂ and 1 mol % of MO, a content of the composition Li₂O—SiO₂—MO ranging from 0.05 to 5.0 wt %.
 12. The ceramic capacitor of claim 7, wherein the dielectric ceramic composition further comprises one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu and wherein a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn₂O₃, V₂O₅ and Cr₂O₃, respectively. 